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1 Ergebnisse
1
Low Dit of $(2-4)\times 10^{10}$ using Y2O3/epi-Si/Ge Gate ..:
, In:
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT)
,
Wan, Hsien-Wen
;
Cheng, Yi-Ting
;
Cheng, Chao-Kai
... - p. 1-2 , 2023
Link:
https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10..
RT T1
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT)
: T1
Low Dit of $(2-4)\times 10^{10}$ using Y2O3/epi-Si/Ge Gate Stacks
UL https://suche.suub.uni-bremen.de/peid=ieee-10134479&Exemplar=1&LAN=DE A1 Wan, Hsien-Wen A1 Cheng, Yi-Ting A1 Cheng, Chao-Kai A1 Chu, Tien-Yu A1 Pi, Tun-Wen A1 Kwo, Jueinai A1 Hong, Minghwei YR 2023 K1 Atomic measurements K1 Annealing K1 Hydrogen K1 Logic gates K1 Very large scale integration K1 Silicon K1 Photoelectricity SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134479 DO https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134479 SF ELIB - SuUB Bremen
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