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1 Ergebnisse
1
Study of SiC trench MOSFET switching performance:
, In:
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT)
,
Yen, Chih-Hung
;
Chen, Yu-Ting
;
Chen, Hua-Mao
... - p. 1-2 , 2023
Link:
https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10..
RT T1 <cTitle>2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT)</cTitle>: T1 <Title>Study of SiC trench MOSFET switching performance</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10134501&Exemplar=1&LAN=DE A1 Yen, Chih-Hung A1 Chen, Yu-Ting A1 Chen, Hua-Mao A1 Huang, Shin-Yi A1 Lee, Mei-Ju A1 Lai, Chih-Ming A1 Hsueh, Li-Tien A1 Wang, Jui-Cheng YR 2023 K1 MOSFET K1 Power demand K1 Silicon carbide K1 Switches K1 Logic gates K1 Very large scale integration K1 Capacitance K1 SiC K1 Trench MOSFET K1 thick bottom oxide SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134501 DO https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134501 SF ELIB - SuUB Bremen
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