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1 Ergebnisse
1
AlGaN/GaN based HEMT with AIN Spacer And Nucleation Layer F..:
, In:
2023 IEEE Devices for Integrated Circuit (DevIC)
,
Dhondiram, Jadhav Swati
;
Khan, Aboo Bakar
- p. 1-4 , 2023
Link:
https://doi.org/10.1109/DevIC57758.2023.10134564
RT T1
2023 IEEE Devices for Integrated Circuit (DevIC)
: T1
AlGaN/GaN based HEMT with AIN Spacer And Nucleation Layer For High Power Application
UL https://suche.suub.uni-bremen.de/peid=ieee-10134564&Exemplar=1&LAN=DE A1 Dhondiram, Jadhav Swati A1 Khan, Aboo Bakar YR 2023 K1 Temperature K1 Ionization K1 Voltage K1 HEMTs K1 Logic gates K1 Capacitance K1 Software K1 AlGaNlGaN K1 HEMT K1 electrical characteristics SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/DevIC57758.2023.10134564 DO https://doi.org/10.1109/DevIC57758.2023.10134564 SF ELIB - SuUB Bremen
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