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1 Ergebnisse
1
Impact of Doping and Temperature on Mobility in Single and ..:
, In:
2023 IEEE Devices for Integrated Circuit (DevIC)
,
Nath, Dwipayan
;
Deb, Deepjyoti
;
Das, Prachuryya Subash
... - p. 392-395 , 2023
Link:
https://doi.org/10.1109/DevIC57758.2023.10134771
RT T1
2023 IEEE Devices for Integrated Circuit (DevIC)
: T1
Impact of Doping and Temperature on Mobility in Single and Dual Core S/D GAA FinFETs
UL https://suche.suub.uni-bremen.de/peid=ieee-10134771&Exemplar=1&LAN=DE A1 Nath, Dwipayan A1 Deb, Deepjyoti A1 Das, Prachuryya Subash A1 Choudhury, Hirakjyoti A1 Pathak, Priyam A1 Goswami, Rupam YR 2023 K1 Degradation K1 Temperature sensors K1 Sensitivity K1 Mobility models K1 Computational modeling K1 Gallium arsenide K1 Doping K1 finFETs K1 gate-all-around K1 single core K1 dual core K1 constant mobility K1 high field saturation K1 doping dependent mobility K1 philips unified mobility K1 transverse electric field K1 mobility degradation SP 392 OP 395 LK http://dx.doi.org/https://doi.org/10.1109/DevIC57758.2023.10134771 DO https://doi.org/10.1109/DevIC57758.2023.10134771 SF ELIB - SuUB Bremen
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