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1 Ergebnisse
1
Impact of Inadequate Mg Activation on Dynamic Threshold Vol..:
, In:
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Sun, Jiahui
;
Zheng, Zheyang
;
Zhang, Li
... - p. 24-27 , 2023
Link:
https://doi.org/10.1109/ISPSD57135.2023.10147398
RT T1 <cTitle>2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Impact of Inadequate Mg Activation on Dynamic Threshold Voltage of Schottky-type $p$-GaN Gate HEMTs</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10147398&Exemplar=1&LAN=DE A1 Sun, Jiahui A1 Zheng, Zheyang A1 Zhang, Li A1 Ng, Yat Hon A1 Shu, Ji A1 Chen, Tao A1 Chen, Kevin J. YR 2023 SN 1946-0201 K1 Integrated circuits K1 Electron traps K1 Hydrogen K1 Lighting K1 Logic gates K1 HEMTs K1 Threshold voltage K1 Electron trapping K1 Mg activation K1 $p$-GaN gate HEMT K1 threshold voltage SP 24 OP 27 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD57135.2023.10147398 DO https://doi.org/10.1109/ISPSD57135.2023.10147398 SF ELIB - SuUB Bremen
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