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1 Ergebnisse
1
3D simulation study of 375V partial SOI SJ LDNMOS BDS limit..:
, In:
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Ching Tee, Elizabeth Kho
;
Antoniou, Marina
;
Green, David
.. - p. 278-281 , 2023
Link:
https://doi.org/10.1109/ISPSD57135.2023.10147409
RT T1 <cTitle>2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>3D simulation study of 375V partial SOI SJ LDNMOS BDS limitation</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10147409&Exemplar=1&LAN=DE A1 Ching Tee, Elizabeth Kho A1 Antoniou, Marina A1 Green, David A1 Holke, Alexander A1 Udrea, Florin YR 2023 SN 1946-0201 K1 Semiconductor device modeling K1 Solid modeling K1 Three-dimensional displays K1 Sensitivity K1 Silicon-on-insulator K1 Semiconductor diodes K1 Power semiconductor devices K1 PSOI K1 Power Integrated Circuits K1 Superjunction K1 3D simulation K1 termination SP 278 OP 281 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD57135.2023.10147409 DO https://doi.org/10.1109/ISPSD57135.2023.10147409 SF ELIB - SuUB Bremen
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