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1 Ergebnisse
1
Improving Surge Current Capability of SBD-Embedded SiC-MOSF..:
, In:
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Iijima, Akifumi
;
Kawahara, Koutarou
;
Sugawara, Katsutoshi
... - p. 238-241 , 2023
Link:
https://doi.org/10.1109/ISPSD57135.2023.10147424
RT T1 <cTitle>2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Improving Surge Current Capability of SBD-Embedded SiC-MOSFETs in Parallel Connection by Applying Bipolar Mode Activation Cells</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10147424&Exemplar=1&LAN=DE A1 Iijima, Akifumi A1 Kawahara, Koutarou A1 Sugawara, Katsutoshi A1 Hino, Shiro A1 Fujiyoshi, Katsuhiro A1 Oritsuki, Yasunori A1 Murakami, Takeshi A1 Takahashi, Tetsuo A1 Kagawa, Yasuhiro A1 Hironaka, Yoichi A1 Nishikawa, Kazuyasu YR 2023 SN 1946-0201 K1 Integrated circuits K1 Degradation K1 Proximity effects K1 Power semiconductor devices K1 Surges K1 SiC K1 MOSFET K1 SBD-embedded K1 bipolar degradation K1 bipolar transistor K1 reliability SP 238 OP 241 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD57135.2023.10147424 DO https://doi.org/10.1109/ISPSD57135.2023.10147424 SF ELIB - SuUB Bremen
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