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1 Ergebnisse
1
Conductivity Enhancement Induced by Confined Vicinal Hole S..:
, In:
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Liao, Hang
;
Zheng, Zheyang
;
Chen, Tao
... - p. 231-234 , 2023
Link:
https://doi.org/10.1109/ISPSD57135.2023.10147434
RT T1 <cTitle>2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Conductivity Enhancement Induced by Confined Vicinal Hole Storage in Enhancement-mode $p$-GaN Gate Double-Channel HEMTs</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10147434&Exemplar=1&LAN=DE A1 Liao, Hang A1 Zheng, Zheyang A1 Chen, Tao A1 Zhang, Li A1 Cheng, Yan A1 Chen, Long A1 Yuan, Li A1 Chen, Kevin J. YR 2023 SN 1946-0201 K1 Integrated circuits K1 Simulation K1 HEMTs K1 Logic gates K1 Conductivity K1 Charge carrier processes K1 Power semiconductor devices K1 p-GaN gate HEMT K1 double channel K1 vicinal hole storage K1 conductivity enhancement SP 231 OP 234 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD57135.2023.10147434 DO https://doi.org/10.1109/ISPSD57135.2023.10147434 SF ELIB - SuUB Bremen
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