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1
Protection of SiC MOSFET from Negative Gate Voltage Spikes ..:
, In:
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Shu, Ji
;
Sun, Jiahui
;
Zheng, Zheyang
. - p. 199-202 , 2023
Link:
https://doi.org/10.1109/ISPSD57135.2023.10147444
RT T1 <cTitle>2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Protection of SiC MOSFET from Negative Gate Voltage Spikes with a Low-Voltage GaN HEMT</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10147444&Exemplar=1&LAN=DE A1 Shu, Ji A1 Sun, Jiahui A1 Zheng, Zheyang A1 Chen, Kevin J. YR 2023 SN 1946-0201 K1 MOSFET K1 Low voltage K1 Silicon carbide K1 Switching loss K1 Voltage K1 Logic gates K1 HEMTs K1 SiC MOSFET K1 GaN HEMT K1 false turn-on K1 gate overstress SP 199 OP 202 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD57135.2023.10147444 DO https://doi.org/10.1109/ISPSD57135.2023.10147444 SF ELIB - SuUB Bremen
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