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1 Ergebnisse
1
3.0-V-Threshold-Voltage p-GaN HEMTs with Low-Loss Reverse C..:
, In:
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Zhou, Feng
;
Xu, Weizong
;
Jin, Yulei
... - p. 370-373 , 2023
Link:
https://doi.org/10.1109/ISPSD57135.2023.10147450
RT T1 <cTitle>2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>3.0-V-Threshold-Voltage p-GaN HEMTs with Low-Loss Reverse Conduction capability</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10147450&Exemplar=1&LAN=DE A1 Zhou, Feng A1 Xu, Weizong A1 Jin, Yulei A1 Zhou, Tianyang A1 Ren, Fangfang A1 Zhou, Dong A1 Xia, Yuanyang A1 Wu, Leke A1 Li, Yiheng A1 Zhu, Tinggang A1 Chen, Dunjun A1 Zhang, Rong A1 Zheng, Youdou A1 Lu, Hai YR 2023 SN 1946-0201 K1 Performance evaluation K1 Integrated circuits K1 Electric potential K1 Switches K1 HEMTs K1 Logic gates K1 Threshold voltage K1 p-GaN HEMT K1 threshold voltage K1 power loss K1 reverse conduction K1 switching capability SP 370 OP 373 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD57135.2023.10147450 DO https://doi.org/10.1109/ISPSD57135.2023.10147450 SF ELIB - SuUB Bremen
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