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Investigations of Residual Damage in SiC Trench MOSFETs aft..:
, In:
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Takahashi, Mitsuki
;
Yano, Hiroshi
;
Iwamuro, Noriyuki
. - p. 250-253 , 2023
Link:
https://doi.org/10.1109/ISPSD57135.2023.10147463
RT T1 <cTitle>2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Investigations of Residual Damage in SiC Trench MOSFETs after Single and Multiple Short-Circuit Stress</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10147463&Exemplar=1&LAN=DE A1 Takahashi, Mitsuki A1 Yano, Hiroshi A1 Iwamuro, Noriyuki A1 Harada, Shinsuke YR 2023 SN 1946-0201 K1 Degradation K1 Integrated circuits K1 MOSFET K1 Electron traps K1 Silicon carbide K1 Power semiconductor devices K1 Leakage currents K1 SiC MOSFETs K1 SiC trench MOSFETs K1 short-circuit K1 residual damage SP 250 OP 253 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD57135.2023.10147463 DO https://doi.org/10.1109/ISPSD57135.2023.10147463 SF ELIB - SuUB Bremen
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