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1 Ergebnisse
1
A Novel IGBT with Variable Conductance Path Realizing Both ..:
, In:
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Yang, Yuxiao
;
Chen, Wanjun
;
Sun, Xinqi
... - p. 175-178 , 2023
Link:
https://doi.org/10.1109/ISPSD57135.2023.10147482
RT T1 <cTitle>2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>A Novel IGBT with Variable Conductance Path Realizing Both Low $V_{on}$ and Turn-off Loss</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10147482&Exemplar=1&LAN=DE A1 Yang, Yuxiao A1 Chen, Wanjun A1 Sun, Xinqi A1 Xu, Xiaorui A1 Xia, Yun A1 Liu, Chao A1 Li, Zhaoji A1 Zhang, Bo A1 Wei, Meng A1 Zhang, Ping A1 Ren, Zhong YR 2023 SN 1946-0201 K1 Insulated gate bipolar transistors K1 Integrated circuits K1 Breakdown voltage K1 Simulation K1 Doping K1 Logic gates K1 Turning K1 IGBT K1 variable conductance path K1 carrier stored K1 on-state voltage K1 turn-off loss SP 175 OP 178 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD57135.2023.10147482 DO https://doi.org/10.1109/ISPSD57135.2023.10147482 SF ELIB - SuUB Bremen
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