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1 Ergebnisse
1
Single-Back and Double-Front Gate-Controlled IGBT for Achie..:
, In:
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Kobayashi, Yusuke
;
Fukui, Munetoshi
;
Matsudai, Tomoko
... - p. 207-210 , 2023
Link:
https://doi.org/10.1109/ISPSD57135.2023.10147483
RT T1 <cTitle>2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Single-Back and Double-Front Gate-Controlled IGBT for Achieving Low Turn-Off Loss</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10147483&Exemplar=1&LAN=DE A1 Kobayashi, Yusuke A1 Fukui, Munetoshi A1 Matsudai, Tomoko A1 Saraya, Takuya A1 Itou, Kazuo A1 Takakura, Toshihiko A1 Suzuki, Shinichi A1 Gejo, Ryohei A1 Sakano, Tatsunori A1 Kato, Takahiro A1 Inokuchi, Tomoaki A1 Takao, Kazuto A1 Hiramoto, Toshiro YR 2023 SN 1946-0201 K1 Insulated gate bipolar transistors K1 Integrated circuits K1 Power demand K1 Control design K1 Switches K1 High-voltage techniques K1 Logic gates K1 IGBT K1 turn-off loss K1 multi gate K1 double gate K1 back gate K1 control gate K1 conduction loss SP 207 OP 210 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD57135.2023.10147483 DO https://doi.org/10.1109/ISPSD57135.2023.10147483 SF ELIB - SuUB Bremen
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