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1 Ergebnisse
1
Method to Study Dynamic Depletion Behaviors in High-Voltage..:
, In:
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Cui, Jiawei
;
Wu, Yanlin
;
Yang, Junjie
... - p. 127-130 , 2023
Link:
https://doi.org/10.1109/ISPSD57135.2023.10147490
RT T1
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
: T1
Method to Study Dynamic Depletion Behaviors in High-Voltage ($BV=1.4\ \text{kV}$) p-GaN Gate HEMT on Sapphire Substrate
UL https://suche.suub.uni-bremen.de/peid=ieee-10147490&Exemplar=1&LAN=DE A1 Cui, Jiawei A1 Wu, Yanlin A1 Yang, Junjie A1 Yu, Jingjing A1 Li, Teng A1 Yang, Xuelin A1 Shen, Bo A1 Wang, Maojun A1 Wei, Jin YR 2023 SN 1946-0201 K1 Integrated circuits K1 Semiconductor device measurement K1 High-voltage techniques K1 Logic gates K1 HEMTs K1 Threshold voltage K1 Power semiconductor devices K1 p-GaN HEMT K1 high voltage K1 depletion region K1 pulse mode K1 measurement SP 127 OP 130 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD57135.2023.10147490 DO https://doi.org/10.1109/ISPSD57135.2023.10147490 SF ELIB - SuUB Bremen
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