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1 Ergebnisse
1
Improved Blocking and Switching Characteristics of Split-Ga..:
, In:
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Kim, Dongyoung
;
DeBoer, Skylar
;
Jang, Seung Yup
.. - p. 350-353 , 2023
Link:
https://doi.org/10.1109/ISPSD57135.2023.10147505
RT T1 <cTitle>2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Improved Blocking and Switching Characteristics of Split-Gate 1.2kV 4H-SiC MOSFET with a Deep P-well</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10147505&Exemplar=1&LAN=DE A1 Kim, Dongyoung A1 DeBoer, Skylar A1 Jang, Seung Yup A1 Morgan, Adam J. A1 Sung, Woongje YR 2023 SN 1946-0201 K1 Integrated circuits K1 MOSFET K1 Semiconductor device measurement K1 Switches K1 Logic gates K1 Split gate flash memory cells K1 Power semiconductor devices K1 SiC K1 MOSFETs K1 Split gate K1 Deep P-well K1 Eox K1 Capacitance K1 Short-circuit Characteristics K1 CGD K1 2D simulation K1 Switching Characteristics SP 350 OP 353 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD57135.2023.10147505 DO https://doi.org/10.1109/ISPSD57135.2023.10147505 SF ELIB - SuUB Bremen
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