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1
Application of a Smart Gate Driver to Detect Aging in SiC P..:
, In:
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Wang, Mengqi
;
Zhang, Jiupeng
;
Ng, Wai Tung
... - p. 187-190 , 2023
Link:
https://doi.org/10.1109/ISPSD57135.2023.10147513
RT T1 <cTitle>2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Application of a Smart Gate Driver to Detect Aging in SiC Power MOSFETs</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10147513&Exemplar=1&LAN=DE A1 Wang, Mengqi A1 Zhang, Jiupeng A1 Ng, Wai Tung A1 Nishio, Haruhiko A1 Iwamoto, Motomitsu A1 Sumida, Hitoshi YR 2023 SN 1946-0201 K1 Integrated circuits K1 MOSFET K1 Silicon carbide K1 Logic gates K1 Aging K1 Pulse width modulation K1 Gate drivers K1 smart gate driver K1 silicon carbide K1 power MOSFET K1 aging detection K1 health monitoring K1 Miller plateau K1 HTGB K1 analog integrated circuit K1 digital control SP 187 OP 190 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD57135.2023.10147513 DO https://doi.org/10.1109/ISPSD57135.2023.10147513 SF ELIB - SuUB Bremen
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