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Switching of a Bus Voltage of 1400 V at 10 MHz Using Vertic..:
, In:
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Edwards, Andrew
;
Padilla, Vianey
;
Drowley, Cliff
... - p. 235-237 , 2023
Link:
https://doi.org/10.1109/ISPSD57135.2023.10147526
RT T1
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
: T1
Switching of a Bus Voltage of 1400 V at 10 MHz Using Vertical GaN Fin-JFETs
UL https://suche.suub.uni-bremen.de/peid=ieee-10147526&Exemplar=1&LAN=DE A1 Edwards, Andrew A1 Padilla, Vianey A1 Drowley, Cliff A1 Pidaparthi, Subhash A1 Michael, James A1 Saxena, Prashant A1 Tandingan, Joseph A1 Meier, Wolfgang A1 Walker, Andrew YR 2023 SN 1946-0201 K1 Performance evaluation K1 Semiconductor device measurement K1 Switches K1 Predictive models K1 SPICE K1 Mathematical models K1 Robustness K1 gallium nitride K1 JFET K1 GaN-on-GaN K1 switching K1 power K1 model SP 235 OP 237 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD57135.2023.10147526 DO https://doi.org/10.1109/ISPSD57135.2023.10147526 SF ELIB - SuUB Bremen
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