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1 Ergebnisse
1
Improvement of HCI and HTRB Reliability on 100V pLDMOS for ..:
, In:
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Park, Dong-Hoon
;
Kim, Min-Woo
;
Min, Jun-Ki
.. - p. 270-273 , 2023
Link:
https://doi.org/10.1109/ISPSD57135.2023.10147539
RT T1 <cTitle>2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Improvement of HCI and HTRB Reliability on 100V pLDMOS for 48V Battery Applications</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10147539&Exemplar=1&LAN=DE A1 Park, Dong-Hoon A1 Kim, Min-Woo A1 Min, Jun-Ki A1 Ko, Kwang-Young A1 Lee, Sang-Gi YR 2023 SN 1946-0201 K1 Human computer interaction K1 Electric breakdown K1 Metals K1 Logic gates K1 Impact ionization K1 Semiconductor process modeling K1 Power semiconductor devices K1 PLDMOS K1 HCI K1 BVdss walk-in K1 HTRB SP 270 OP 273 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD57135.2023.10147539 DO https://doi.org/10.1109/ISPSD57135.2023.10147539 SF ELIB - SuUB Bremen
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