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1 Ergebnisse
1
700 V/2.5 A Normally-off Ultrathin-barrier AlGaN(<6nm)/GaN ..:
, In:
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Luan, Tiantian
;
Huang, Sen
;
Yao, Yixu
... - p. 103-106 , 2023
Link:
https://doi.org/10.1109/ISPSD57135.2023.10147548
RT T1 <cTitle>2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>700 V/2.5 A Normally-off Ultrathin-barrier AlGaN(<6nm)/GaN MIS-HEMTs with Improved Gate Overdrive Window and PBTI</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10147548&Exemplar=1&LAN=DE A1 Luan, Tiantian A1 Huang, Sen A1 Yao, Yixu A1 Jiang, Qimeng A1 Wang, Yuhao A1 Huang, Yifei A1 Feng, Chao A1 Wang, Xinhua A1 Liu, Xinyu A1 Wang, Ronghua A1 Ren, Yongshuo A1 Cheng, Wanxi A1 Liang, Huinan YR 2023 SN 1946-0201 K1 Fabrication K1 Integrated circuits K1 Semiconductor device measurement K1 Logic gates K1 HEMTs K1 Dielectric measurement K1 Wide band gap semiconductors K1 AlGaN/GaN heterostructure K1 ultrathin-barrier K1 enhancement-mode K1 gate overdrive window K1 PBTI SP 103 OP 106 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD57135.2023.10147548 DO https://doi.org/10.1109/ISPSD57135.2023.10147548 SF ELIB - SuUB Bremen
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