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1 Ergebnisse
1
High Performance Dual Field Plate Trench MOSFETs for Middle..:
, In:
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Tokuyama, Shuhei
;
Kato, Hiroaki
;
Kachi, Tsuyoshi
.. - p. 40-43 , 2023
Link:
https://doi.org/10.1109/ISPSD57135.2023.10147550
RT T1 <cTitle>2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>High Performance Dual Field Plate Trench MOSFETs for Middle-voltage Applications</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10147550&Exemplar=1&LAN=DE A1 Tokuyama, Shuhei A1 Kato, Hiroaki A1 Kachi, Tsuyoshi A1 Miyashita, Katsura A1 Kobayashi, Kenya YR 2023 SN 1946-0201 K1 Performance evaluation K1 Integrated circuits K1 MOSFET K1 Electric potential K1 Breakdown voltage K1 Metallization K1 Switches K1 field-plate K1 RESURF K1 stepped-oxide K1 dual-field-plate trench MOSFET K1 additional field-plate K1 specific on-resistance K1 output charge K1 gate switching charge SP 40 OP 43 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD57135.2023.10147550 DO https://doi.org/10.1109/ISPSD57135.2023.10147550 SF ELIB - SuUB Bremen
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