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1 Ergebnisse
1
Vertical GaN Schottky Barrier Diode with Record High FOM (1..:
, In:
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Zou, Ping
;
Wang, Haofan
;
Wu, Junye
... - p. 88-90 , 2023
Link:
https://doi.org/10.1109/ISPSD57135.2023.10147551
RT T1
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
: T1
Vertical GaN Schottky Barrier Diode with Record High FOM (1.23GW/cm2) Fully Grown by Hydride Vapor Phase Epitaxy
UL https://suche.suub.uni-bremen.de/peid=ieee-10147551&Exemplar=1&LAN=DE A1 Zou, Ping A1 Wang, Haofan A1 Wu, Junye A1 Liao, Zeliang A1 Huang, Shuangwu A1 Zhong, Ze A1 Li, Xiaobo A1 Qiu, Feng A1 Zhuang, Wenrong A1 Chen, Longkou A1 Liu, Xinke YR 2023 SN 1946-0201 K1 Schottky diodes K1 Power demand K1 Photonic band gap K1 Schottky barriers K1 Indium tin oxide K1 Voltage K1 Epitaxial growth SP 88 OP 90 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD57135.2023.10147551 DO https://doi.org/10.1109/ISPSD57135.2023.10147551 SF ELIB - SuUB Bremen
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