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1 Ergebnisse
1
A High-Speed Level Shifter with dVs/dt Noise Immunity Enhan..:
, In:
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Zheng, Yifei
;
Yuan, Qing
;
Song, Deyuan
... - p. 203-206 , 2023
Link:
https://doi.org/10.1109/ISPSD57135.2023.10147560
RT T1 <cTitle>2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>A High-Speed Level Shifter with dVs/dt Noise Immunity Enhancement Structure for 200V Monolithic GaN Power IC</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10147560&Exemplar=1&LAN=DE A1 Zheng, Yifei A1 Yuan, Qing A1 Song, Deyuan A1 Ying, Yutao A1 Zhu, Jing A1 Sun, Weifeng A1 Zhang, Long A1 Li, Sheng A1 Wang, Denggui A1 Zhou, Jianjun A1 Zhang, Sen A1 He, Nailong YR 2023 SN 1946-0201 K1 Integrated circuits K1 Semiconductor device measurement K1 Signal processing K1 Robustness K1 Delays K1 Power semiconductor devices K1 Transistors K1 Gallium nitride (GaN) K1 monolithic GaN power IC K1 level shifter SP 203 OP 206 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD57135.2023.10147560 DO https://doi.org/10.1109/ISPSD57135.2023.10147560 SF ELIB - SuUB Bremen
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