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1 Ergebnisse
1
Gate Driver IC with Fully Integrated Overcurrent Protection..:
, In:
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Zhang, Haifeng
;
Zhang, Dibo
;
Yamasaki, Hiromu
... - p. 76-79 , 2023
Link:
https://doi.org/10.1109/ISPSD57135.2023.10147568
RT T1 <cTitle>2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Gate Driver IC with Fully Integrated Overcurrent Protection Function by Measuring Gate-to-Emitter Voltage During IGBT Conduction</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10147568&Exemplar=1&LAN=DE A1 Zhang, Haifeng A1 Zhang, Dibo A1 Yamasaki, Hiromu A1 Hata, Katsuhiro A1 Wada, Keiji A1 Akatsu, Kan A1 Omura, Ichiro A1 Takamiya, Makoto YR 2023 SN 1946-0201 K1 Integrated circuits K1 Insulated gate bipolar transistors K1 Semiconductor device measurement K1 Voltage measurement K1 High-voltage techniques K1 Logic gates K1 Gate drivers K1 overcurrent K1 protection K1 gate driver K1 IC K1 gate voltage K1 IGBT SP 76 OP 79 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD57135.2023.10147568 DO https://doi.org/10.1109/ISPSD57135.2023.10147568 SF ELIB - SuUB Bremen
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