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1 Ergebnisse
1
Experimental Study on SOI LIGBT with Field Plate Resistance..:
, In:
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Wei, Jie
;
Zhu, Pengchen
;
Wei, Yuxi
... - p. 406-409 , 2023
Link:
https://doi.org/10.1109/ISPSD57135.2023.10147585
RT T1 <cTitle>2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Experimental Study on SOI LIGBT with Field Plate Resistances at Anode Side</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10147585&Exemplar=1&LAN=DE A1 Wei, Jie A1 Zhu, Pengchen A1 Wei, Yuxi A1 Yang, Kemeng A1 Li, Jie A1 Wang, Junnan A1 Dai, Kaiwei A1 Song, Hua A1 Zhang, Sen A1 Zhang, Wentong A1 Zhang, Bo A1 Luo, Xiaorong YR 2023 SN 1946-0201 K1 Resistance K1 Integrated circuits K1 Voltage K1 Logic gates K1 Turning K1 Feature extraction K1 Power semiconductor devices K1 SOI LIGBT K1 field plate resistance K1 snapback effect K1 turnoff loss K1 on-state voltage drops SP 406 OP 409 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD57135.2023.10147585 DO https://doi.org/10.1109/ISPSD57135.2023.10147585 SF ELIB - SuUB Bremen
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