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1 Ergebnisse
1
In-Situ Extraction of the Thermal Impedance of GaN Power HE..:
, In:
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Catalano, A. P.
;
Scognamillo, C.
;
d'Alessandro, V.
. - p. 310-313 , 2023
Link:
https://doi.org/10.1109/ISPSD57135.2023.10147598
RT T1 <cTitle>2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>In-Situ Extraction of the Thermal Impedance of GaN Power HEMTs Embedded in PCB-based Power Circuits</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10147598&Exemplar=1&LAN=DE A1 Catalano, A. P. A1 Scognamillo, C. A1 d'Alessandro, V. A1 Codecasa, L. YR 2023 SN 1946-0201 K1 Temperature measurement K1 Temperature sensors K1 Semiconductor device modeling K1 Semiconductor device measurement K1 HEMTs K1 Numerical models K1 Power semiconductor devices K1 electrothermal simulations K1 experimental technique K1 GaN power HEMT K1 in-situ K1 junction-to-ambient K1 thermal impedance SP 310 OP 313 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD57135.2023.10147598 DO https://doi.org/10.1109/ISPSD57135.2023.10147598 SF ELIB - SuUB Bremen
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