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1 Ergebnisse
1
Gate Lifetime of P-Gate GaN HEMT in Inductive Power Switchi..:
, In:
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Wang, Bixuan
;
Zhang, Ruizhe
;
Wang, Hengyu
... - p. 20-23 , 2023
Link:
https://doi.org/10.1109/ISPSD57135.2023.10147610
RT T1 <cTitle>2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Gate Lifetime of P-Gate GaN HEMT in Inductive Power Switching</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10147610&Exemplar=1&LAN=DE A1 Wang, Bixuan A1 Zhang, Ruizhe A1 Wang, Hengyu A1 He, Quanbo A1 Song, Qihao A1 Li, Qiang A1 Udrea, Florin A1 Zhang, Yuhao YR 2023 SN 1946-0201 K1 Switching frequency K1 RLC circuits K1 Switches K1 Logic gates K1 HEMTs K1 Power semiconductor devices K1 Voltage control K1 GaN K1 HEMT K1 gate K1 spike K1 overvoltage K1 switching K1 reliability K1 lifetime K1 hard switching K1 power switching SP 20 OP 23 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD57135.2023.10147610 DO https://doi.org/10.1109/ISPSD57135.2023.10147610 SF ELIB - SuUB Bremen
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