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Impact of Layout Arrangement on Surge Current and Avalanche..:
, In:
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Hsu, Fu-Jen
;
Hung, Hsiang-Ting
;
Yen, Cheng-Tyng
- p. 314-317 , 2023
Link:
https://doi.org/10.1109/ISPSD57135.2023.10147620
RT T1
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
: T1
Impact of Layout Arrangement on Surge Current and Avalanche Robustness of Silicon Carbide JBS Diodes
UL https://suche.suub.uni-bremen.de/peid=ieee-10147620&Exemplar=1&LAN=DE A1 Hsu, Fu-Jen A1 Hung, Hsiang-Ting A1 Yen, Cheng-Tyng YR 2023 SN 1946-0201 K1 Schottky diodes K1 Systematics K1 Silicon carbide K1 Layout K1 Schottky barriers K1 Voltage K1 Robustness K1 SiC K1 JBS K1 surge K1 avalanche K1 EAS SP 314 OP 317 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD57135.2023.10147620 DO https://doi.org/10.1109/ISPSD57135.2023.10147620 SF ELIB - SuUB Bremen
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