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1
GaN-HEMT with a Back-Gated Segment for High Voltage Cascode:
, In:
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Reiner, Richard
;
Moench, Stefan
;
Waltereit, Patrick
... - p. 227-230 , 2023
Link:
https://doi.org/10.1109/ISPSD57135.2023.10147630
RT T1 <cTitle>2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>GaN-HEMT with a Back-Gated Segment for High Voltage Cascodes</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10147630&Exemplar=1&LAN=DE A1 Reiner, Richard A1 Moench, Stefan A1 Waltereit, Patrick A1 Basler, Michael A1 Muller, Stefan A1 Mikulla, Michael A1 Quay, Rudiger YR 2023 SN 1946-0201 K1 Integrated circuits K1 Fabrication K1 Semiconductor device measurement K1 Low voltage K1 High-voltage techniques K1 HEMTs K1 Pins K1 GaN-on-Si K1 cascodes K1 cascades K1 stacking K1 back-gating K1 self-compatible transistor K1 multi-stage transistor circuit SP 227 OP 230 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD57135.2023.10147630 DO https://doi.org/10.1109/ISPSD57135.2023.10147630 SF ELIB - SuUB Bremen
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