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1 Ergebnisse
1
A 15V operated Shallow Trench IGBT(ST-IGBT) fabricated by l..:
, In:
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Tanaka, Masahiro
;
Abe, Naoki
;
Nakagawa, Akio
- p. 147-150 , 2023
Link:
https://doi.org/10.1109/ISPSD57135.2023.10147646
RT T1
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
: T1
A 15V operated Shallow Trench IGBT(ST-IGBT) fabricated by low temperature process and optimized for 12inch wafers
UL https://suche.suub.uni-bremen.de/peid=ieee-10147646&Exemplar=1&LAN=DE A1 Tanaka, Masahiro A1 Abe, Naoki A1 Nakagawa, Akio YR 2023 SN 1946-0201 K1 Insulated gate bipolar transistors K1 Integrated circuits K1 Fabrication K1 Rapid thermal annealing K1 Rapid thermal processing K1 Ion implantation K1 Doping K1 IGBT K1 shallow trench K1 CMOS compatible process K1 12inch wafer K1 edge termination SP 147 OP 150 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD57135.2023.10147646 DO https://doi.org/10.1109/ISPSD57135.2023.10147646 SF ELIB - SuUB Bremen
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