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1 Ergebnisse
1
Comprehensive MVSG Compact Model for Power GaN Devices:
, In:
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Fang, Ryan
;
Feng, Yijing
;
Chong, Jessica
... - p. 123-126 , 2023
Link:
https://doi.org/10.1109/ISPSD57135.2023.10147658
RT T1 <cTitle>2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Comprehensive MVSG Compact Model for Power GaN Devices</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10147658&Exemplar=1&LAN=DE A1 Fang, Ryan A1 Feng, Yijing A1 Chong, Jessica A1 Chan, Kaiman A1 Radhakrishna, Ujwal A1 We, Lan YR 2023 SN 1946-0201 K1 Semiconductor device modeling K1 Integrated circuits K1 Industries K1 Logic gates K1 Threshold voltage K1 Behavioral sciences K1 Power semiconductor devices K1 MVSG model K1 GaN-HEMT K1 self-heating K1 ther-mal coupling K1 trapping K1 p-GaN K1 dynamic threshold voltage K1 en-hancement mode K1 device modeling K1 power device K1 switch mode converter SP 123 OP 126 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD57135.2023.10147658 DO https://doi.org/10.1109/ISPSD57135.2023.10147658 SF ELIB - SuUB Bremen
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