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Stability Analysis of Parallel SiC power MOSFETs based on a..:
, In:
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Nagel, Michel
;
Kovacevic-Badstuebner, Ivana
;
Salvatore, Race
... - p. 338-341 , 2023
Link:
https://doi.org/10.1109/ISPSD57135.2023.10147660
RT T1 <cTitle>2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Stability Analysis of Parallel SiC power MOSFETs based on a Virtual Prototype</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10147660&Exemplar=1&LAN=DE A1 Nagel, Michel A1 Kovacevic-Badstuebner, Ivana A1 Salvatore, Race A1 Popescu, Dan A1 Popescu, Bogdan A1 Romano, Daniele A1 Antonini, Giulio A1 Grossner, Ulrike YR 2023 SN 1946-0201 K1 MOSFET K1 Silicon carbide K1 Prototypes K1 Multichip modules K1 Stability analysis K1 Power semiconductor devices K1 Integrated circuit modeling K1 stability K1 parallel SiC power MOSFETs K1 virtual prototype K1 switching transients SP 338 OP 341 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD57135.2023.10147660 DO https://doi.org/10.1109/ISPSD57135.2023.10147660 SF ELIB - SuUB Bremen
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