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1 Ergebnisse
1
Isolated JFET Design and Performance Analyze by Experiment ..:
, In:
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Ma, Dingxiang
;
Gao, Yue
;
Hou, Dican
... - p. 254-257 , 2023
Link:
https://doi.org/10.1109/ISPSD57135.2023.10147671
RT T1
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
: T1
Isolated JFET Design and Performance Analyze by Experiment Based on Standard 0.18µm BCD Platform
UL https://suche.suub.uni-bremen.de/peid=ieee-10147671&Exemplar=1&LAN=DE A1 Ma, Dingxiang A1 Gao, Yue A1 Hou, Dican A1 Yuan, Zhangyi'an A1 Qiao, Ming A1 Zhen, Shaowei A1 Zhang, Bo YR 2023 SN 1946-0201 K1 Semiconductor device measurement K1 Voltage measurement K1 Fluctuations K1 Voltage fluctuations K1 Power measurement K1 Stability analysis K1 JFETs K1 JFET K1 standard BCD platform K1 pinch-off voltage K1 DIBL K1 process fluctuation SP 254 OP 257 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD57135.2023.10147671 DO https://doi.org/10.1109/ISPSD57135.2023.10147671 SF ELIB - SuUB Bremen
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