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1 Ergebnisse
1
Demonstration of the Hydrogen Passivated GaN HEMTs IC Platf..:
, In:
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Li, Fan
;
Li, Ang
;
Wang, Yubo
... - p. 99-102 , 2023
Link:
https://doi.org/10.1109/ISPSD57135.2023.10147680
RT T1 <cTitle>2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Demonstration of the Hydrogen Passivated GaN HEMTs IC Platform</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10147680&Exemplar=1&LAN=DE A1 Li, Fan A1 Li, Ang A1 Wang, Yubo A1 Zhu, Yuhao A1 Yu, Chengruiyuan A1 Ding, Chengmurong A1 Wu, Shiqiang A1 Liu, Wen A1 Yu, Guohao A1 Gao, Xiaotian A1 Wang, Zheming A1 Zhang, Baoshun YR 2023 SN 1946-0201 K1 Resistors K1 Monolithic integrated circuits K1 Logic gates K1 HEMTs K1 Dielectrics K1 Semiconductor diodes K1 Power semiconductor devices K1 GaN HEMTs K1 $H_{2}$ Passivation K1 IC Platform SP 99 OP 102 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD57135.2023.10147680 DO https://doi.org/10.1109/ISPSD57135.2023.10147680 SF ELIB - SuUB Bremen
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