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1 Ergebnisse
1
1.2 kV SiC MOSFET Body Diode Turn-Off in Fast Switching: Ch..:
, In:
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Pham, Thanh-Toan
;
Franchi, Jimmy
;
Lee, Kwangwon
. - p. 334-337 , 2023
Link:
https://doi.org/10.1109/ISPSD57135.2023.10147712
RT T1 <cTitle>2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>1.2 kV SiC MOSFET Body Diode Turn-Off in Fast Switching: Channel Conduction, Carrier Plasma and Parasitic Turn-On</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10147712&Exemplar=1&LAN=DE A1 Pham, Thanh-Toan A1 Franchi, Jimmy A1 Lee, Kwangwon A1 Domeij, Martin YR 2023 SN 1946-0201 K1 MOSFET K1 Silicon carbide K1 Switches K1 Robustness K1 Semiconductor diodes K1 Plasmas K1 Power semiconductor devices K1 1.2 kV SiC MOSFETs K1 Body Diode K1 Fast Switching K1 Channel Conduction K1 Carrier Plasma K1 Parasitic Turn-On SP 334 OP 337 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD57135.2023.10147712 DO https://doi.org/10.1109/ISPSD57135.2023.10147712 SF ELIB - SuUB Bremen
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