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1 Ergebnisse
1
Enhanced Design Architecture to Suppress Leakage Current of..:
, In:
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Isukapati, Sundar Babu
;
Jang, Seung Yup
;
Sung, Woongje
- p. 358-361 , 2023
Link:
https://doi.org/10.1109/ISPSD57135.2023.10147724
RT T1
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
: T1
Enhanced Design Architecture to Suppress Leakage Current of High-Voltage (HV) Lateral nMOSFETs in 4H-SiC
UL https://suche.suub.uni-bremen.de/peid=ieee-10147724&Exemplar=1&LAN=DE A1 Isukapati, Sundar Babu A1 Jang, Seung Yup A1 Sung, Woongje YR 2023 SN 1946-0201 K1 Performance evaluation K1 MOSFET K1 Silicon carbide K1 High-voltage techniques K1 Power semiconductor devices K1 Leakage currents K1 Power conversion K1 4H-SiC K1 Power IC K1 RESURF K1 Lateral MOSFETs K1 SMART IC SP 358 OP 361 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD57135.2023.10147724 DO https://doi.org/10.1109/ISPSD57135.2023.10147724 SF ELIB - SuUB Bremen
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