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1 Ergebnisse
1
Gate Impedance Analysis of SiC power MOSFETs with SiO2 and ..:
, In:
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Race, Salvatore
;
Kumar, Piyush
;
Natzke, Philipp
... - p. 9-12 , 2023
Link:
https://doi.org/10.1109/ISPSD57135.2023.10147725
RT T1 <cTitle>2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Gate Impedance Analysis of SiC power MOSFETs with SiO2 and High-k Dielectric</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10147725&Exemplar=1&LAN=DE A1 Race, Salvatore A1 Kumar, Piyush A1 Natzke, Philipp A1 Kovacevic-Badstuebner, Ivana A1 Bathen, Marianne Etzelmuller A1 Grossner, Ulrike A1 Romano, Gianpaolo A1 Arango, Yulieth A1 Bolat, Sami A1 Wirths, Stephan A1 Knoll, Lars A1 Mihaila, Andrei YR 2023 SN 1946-0201 K1 Performance evaluation K1 Integrated circuits K1 Fabrication K1 MOSFET K1 Silicon carbide K1 Logic gates K1 Power semiconductor devices K1 SiC power MOSFET K1 gate impedance K1 dielectric-SiC interface K1 conductance method SP 9 OP 12 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD57135.2023.10147725 DO https://doi.org/10.1109/ISPSD57135.2023.10147725 SF ELIB - SuUB Bremen
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