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1 Ergebnisse
1
0.18µm 200V SOI-BCD Technology with Ultra-Low Specific On-R..:
, In:
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Lu, Li
;
Ma, Shulang
;
Xiao, Jinyu
... - p. 266-269 , 2023
Link:
https://doi.org/10.1109/ISPSD57135.2023.10147740
RT T1 <cTitle>2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>0.18µm 200V SOI-BCD Technology with Ultra-Low Specific On-Resistance LDMOS for Automotive Application</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10147740&Exemplar=1&LAN=DE A1 Lu, Li A1 Ma, Shulang A1 Xiao, Jinyu A1 Lin, Feng A1 Chen, Shuxian A1 Shao, Hong A1 Zhang, Sen A1 Xiao, Kui A1 Dai, Yixin A1 Zhu, Zhihan A1 Ma, Jia A1 Wei, Jiaxing A1 Zhang, Long A1 Liu, Siyang A1 Sun, Weifeng YR 2023 SN 1946-0201 K1 Negative bias temperature instability K1 Resistance K1 Integrated circuits K1 Human computer interaction K1 Buffer layers K1 Thermal variables control K1 Automotive applications K1 component K1 formatting K1 style K1 styling K1 insert SP 266 OP 269 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD57135.2023.10147740 DO https://doi.org/10.1109/ISPSD57135.2023.10147740 SF ELIB - SuUB Bremen
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