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1
A Review on Comparative Analysis of Various Mosfets on The ..:
, In:
2023 International Conference on Disruptive Technologies (ICDT)
,
Garg, Nitin
;
Rizvi, Aliya
;
Chandra, Astuti
. - p. 456-461 , 2023
Link:
https://doi.org/10.1109/ICDT57929.2023.10150488
RT T1 <cTitle>2023 International Conference on Disruptive Technologies (ICDT)</cTitle>: T1 <Title>A Review on Comparative Analysis of Various Mosfets on The Basis of Electrical Parameters</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10150488&Exemplar=1&LAN=DE A1 Garg, Nitin A1 Rizvi, Aliya A1 Chandra, Astuti A1 Singh, Anjali YR 2023 K1 MOSFET K1 Scalability K1 Gallium arsenide K1 Voltage K1 Logic gates K1 FinFETs K1 Market research K1 Single Gate Junction-less MOSFET K1 Double Gate Junction-less MOSFET K1 Gate All Around Junction-less MOSFET K1 FINFET K1 Short Channel and Hot Carrier Effects SP 456 OP 461 LK http://dx.doi.org/https://doi.org/10.1109/ICDT57929.2023.10150488 DO https://doi.org/10.1109/ICDT57929.2023.10150488 SF ELIB - SuUB Bremen
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