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1 Ergebnisse
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Design of low-power and high-performance 10 nm SRAM using E..:
, In:
2023 International Symposium on Devices, Circuits and Systems (ISDCS)
,
Kumar Singh, Niraj
;
Shankar, Ravi
;
Verma, Suraj
. - p. 01-06 , 2023
Link:
https://doi.org/10.1109/ISDCS58735.2023.10153525
RT T1
2023 International Symposium on Devices, Circuits and Systems (ISDCS)
: T1
Design of low-power and high-performance 10 nm SRAM using Electrostatically doped TMD TFET
UL https://suche.suub.uni-bremen.de/peid=ieee-10153525&Exemplar=1&LAN=DE A1 Kumar Singh, Niraj A1 Shankar, Ravi A1 Verma, Suraj A1 Sahoo, Manodipan YR 2023 SN 2767-9837 K1 Performance evaluation K1 MOSFET K1 TFETs K1 Random access memory K1 Silicon K1 Delays K1 Power dissipation K1 EDTFET K1 TMD K1 SRAM K1 HOLD K1 WRITE K1 READ SP 01 OP 06 LK http://dx.doi.org/https://doi.org/10.1109/ISDCS58735.2023.10153525 DO https://doi.org/10.1109/ISDCS58735.2023.10153525 SF ELIB - SuUB Bremen
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