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1 Ergebnisse
1
A DC SPICE Level 3 Model for 4H-SiC lateral NMOSFET under s..:
, In:
2023 18th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)
,
Rinaldi, Nicola
;
Licciardo, Gian Domenico
;
Benedetto, Luigi Di
.. - p. 233-236 , 2023
Link:
https://doi.org/10.1109/PRIME58259.2023.10161965
RT T1 <cTitle>2023 18th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)</cTitle>: T1 <Title>A DC SPICE Level 3 Model for 4H-SiC lateral NMOSFET under strong inversion conditions</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10161965&Exemplar=1&LAN=DE A1 Rinaldi, Nicola A1 Licciardo, Gian Domenico A1 Benedetto, Luigi Di A1 Rommel, Mathias A1 Erlbacher, Tobias YR 2023 K1 Semiconductor device modeling K1 Geometry K1 Metals K1 MOSFET circuits K1 SPICE K1 Mathematical models K1 Threshold voltage K1 4H-SiC lateral MOSFET K1 electrical characteristics K1 SPICE model K1 Wide-bandgap semiconductors SP 233 OP 236 LK http://dx.doi.org/https://doi.org/10.1109/PRIME58259.2023.10161965 DO https://doi.org/10.1109/PRIME58259.2023.10161965 SF ELIB - SuUB Bremen
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