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Characterization of GaN-on-SiC Wafers using a Multi-Method ..:
, In:
2023 22nd IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)
,
Song, Yiwen
;
Shoemaker, Daniel
;
Kang, Kyuhwe
... - p. 1-4 , 2023
Link:
https://doi.org/10.1109/ITherm55368.2023.10177642
RT T1
2023 22nd IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)
: T1
Characterization of GaN-on-SiC Wafers using a Multi-Method Laser-Based Pump-Probe Technique
UL https://suche.suub.uni-bremen.de/peid=ieee-10177642&Exemplar=1&LAN=DE A1 Song, Yiwen A1 Shoemaker, Daniel A1 Kang, Kyuhwe A1 Schuette, Michael A1 Tweedie, James S. A1 Sheppard, Scott T. A1 Choi, Sukwon YR 2023 SN 2694-2135 K1 Temperature measurement K1 Performance evaluation K1 Thermal resistance K1 HEMTs K1 Conductivity K1 Thermal conductivity K1 Transmission line measurements K1 Frequency-domain thermoreflectance K1 gallium nitride (GaN) K1 high electron mobility transistor (HEMT) K1 steady-state thermoreflectance K1 thermal boundary conductance K1 thermal conductivity K1 Raman spectroscopy SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/ITherm55368.2023.10177642 DO https://doi.org/10.1109/ITherm55368.2023.10177642 SF ELIB - SuUB Bremen
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