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1 Ergebnisse
1
Beyond 10 μm Depth Ultra-High Speed Etch Process with 84% L..:
, In:
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
,
Kihara, Yoshihide
;
Tomura, Maju
;
Sakamoto, Wataru
.. - p. 1-2 , 2023
Link:
https://doi.org/10.23919/VLSITechnologyandCir57934.202..
RT T1 <cTitle>2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)</cTitle>: T1 <Title>Beyond 10 μm Depth Ultra-High Speed Etch Process with 84% Lower Carbon Footprint for Memory Channel Hole of 3D NAND Flash over 400 Layers</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10185160&Exemplar=1&LAN=DE A1 Kihara, Yoshihide A1 Tomura, Maju A1 Sakamoto, Wataru A1 Honda, Masanobu A1 Kojima, Masayuki YR 2023 SN 2158-9682 K1 Silicon compounds K1 Three-dimensional displays K1 Chemistry K1 Cryogenics K1 Very large scale integration K1 Market research K1 Etching K1 3D NAND K1 HAR etching K1 Cryogenic etching K1 etch rate K1 low carbon footprint SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185160 DO https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185160 SF ELIB - SuUB Bremen
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