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Nanosheet-based Complementary Field-Effect Transistors (CFE..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),

Mertens, H. ; Hosseini, M. ; Chiarella, T.... - p. 1-2 , 2023

Link: https://doi.org/10.23919/VLSITechnologyandCir57934.202..

RT 
T1 <cTitle>2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)</cTitle>: T1 <Title>Nanosheet-based Complementary Field-Effect Transistors (CFETs) at 48nm Gate Pitch, and Middle Dielectric Isolation to enable CFET Inner Spacer Formation and Multi-Vt Patterning</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-10185218&Exemplar=1&LAN=DE
				
A1 Mertens, H.
A1 Hosseini, M.
A1 Chiarella, T.
A1 Zhou, D.
A1 Wang, S.
A1 Mannaert, G.
A1 Dupuy, E.
A1 Radisic, D.
A1 Tao, Z.
A1 Oniki, Y.
A1 Hikavyy, A.
A1 Rosseel, R.
A1 Mingardi, A.
A1 Choudhury, S.
A1 Gowda, P. Puttarame
A1 Sebaai, F.
A1 Peter, A.
A1 Vandersmissen, K.
A1 Soulie, J.P.
A1 Keersgieter, A. De
A1 Lima, L. Petersen Barbosa
A1 Cavalcante, C.
A1 Batuk, D.
A1 Martinez, G.T.
A1 Geypen, J.
A1 Seidel, F.
A1 Paulussen, K.
A1 Favia, P.
A1 Boemmels, J.
A1 Loo, R.
A1 Wong, P.
A1 Marquez, A. Sepulveda
A1 Chan, B.T.
A1 Mitard, J.
A1 Subramanian, S.
A1 Demuynck, S.
A1 Litta, E. Dentoni
A1 Horiguchi, N.
A1 Samavedam, S.
A1 Biesemans, S.
YR 2023
SN 2158-9682
K1 ISO
K1 Metals
K1 Logic gates
K1 Very large scale integration
K1 Silicon
K1 Nanoscale devices
K1 Dielectrics
SP 1
OP 2
LK http://dx.doi.org/https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185218
DO https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185218
SF ELIB - SuUB Bremen

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