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1 Ergebnisse
1
A 4.0GHz UHS Pseudo Two-port SRAM with BL Charge Time Reduc..:
, In:
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
,
Kim, Jeongkyun
;
Yook, Byungho
;
Choi, Taemin
... - p. 1-2 , 2023
Link:
https://doi.org/10.23919/VLSITechnologyandCir57934.202..
RT T1
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
: T1
A 4.0GHz UHS Pseudo Two-port SRAM with BL Charge Time Reduction and Flying Word-Line for HPC Applications in 4nm FinFET Technology
UL https://suche.suub.uni-bremen.de/peid=ieee-10185223&Exemplar=1&LAN=DE A1 Kim, Jeongkyun A1 Yook, Byungho A1 Choi, Taemin A1 Choi, Kyuwon A1 Lee, Chanho A1 Li, Yunrong A1 Lee, Youngo A1 Yun, Seok A1 Do, Changhoon A1 Tang, Hoyoung A1 Lee, Inhak A1 Seo, Dongwook A1 Baeck, Sangyeop YR 2023 SN 2158-9682 K1 High performance computing K1 Loading K1 Random access memory K1 Computer architecture K1 Very large scale integration K1 Logic gates K1 FinFETs K1 Pseudo Two-port SRAM K1 High Speed K1 BL Pre-Charge Control K1 Flying Word-line SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185223 DO https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185223 SF ELIB - SuUB Bremen
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