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1 Ergebnisse
1
A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channe..:
, In:
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
,
Hikake, Kaito
;
Li, Zhuo
;
Hao, Junxiang
... - p. 1-2 , 2023
Link:
https://doi.org/10.23919/VLSITechnologyandCir57934.202..
RT T1 <cTitle>2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)</cTitle>: T1 <Title>A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel and InSnOx Electrode with Normally-off Operation, High Mobility and Reliability for 3D Integrated Devices</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10185234&Exemplar=1&LAN=DE A1 Hikake, Kaito A1 Li, Zhuo A1 Hao, Junxiang A1 Pandy, Chitra A1 Saraya, Takuya A1 Hiramoto, Toshiro A1 Takahashi, Takanori A1 Uenuma, Mutsunori A1 Uraoka, Yukiharu A1 Kobayashi, Masaharu YR 2023 SN 2158-9682 K1 Electrodes K1 Three-dimensional displays K1 Field effect transistors K1 Very large scale integration K1 Reliability engineering K1 Nanoscale devices K1 Integrated circuit reliability SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185234 DO https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185234 SF ELIB - SuUB Bremen
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