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1 Ergebnisse
1
First Study of the Charge Trapping Aggravation Induced by A..:
, In:
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
,
Zhou, Zuopu
;
Jiao, Leming
;
Zheng, Zijie
... - p. 1-2 , 2023
Link:
https://doi.org/10.23919/VLSITechnologyandCir57934.202..
RT T1 <cTitle>2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)</cTitle>: T1 <Title>First Study of the Charge Trapping Aggravation Induced by Anti-Ferroelectric Switching in the MFIS Stack</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10185236&Exemplar=1&LAN=DE A1 Zhou, Zuopu A1 Jiao, Leming A1 Zheng, Zijie A1 Wang, Xiaolin A1 Zhang, Dong A1 Ni, Kai A1 Gong, Xiao YR 2023 SN 2158-9682 K1 Degradation K1 Systematics K1 Fluctuations K1 Switches K1 Very large scale integration K1 Predictive models K1 Iron SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185236 DO https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185236 SF ELIB - SuUB Bremen
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