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1 Ergebnisse
1
Non-Destructive-Read 1T1C Ferroelectric Capacitive Memory C..:
, In:
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
,
Zhou, Zuopu
;
Jiao, Leming
;
Kong, Qiwen
... - p. 1-2 , 2023
Link:
https://doi.org/10.23919/VLSITechnologyandCir57934.202..
RT T1 <cTitle>2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)</cTitle>: T1 <Title>Non-Destructive-Read 1T1C Ferroelectric Capacitive Memory Cell with BEOL 3D Monolithically Integrated IGZO Access Transistor for 4F2 High-Density Integration</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10185243&Exemplar=1&LAN=DE A1 Zhou, Zuopu A1 Jiao, Leming A1 Kong, Qiwen A1 Zheng, Zijie A1 Han, Kaizhen A1 Chen, Yue A1 Sun, Chen A1 Nguyen, Bich-Yen A1 Gong, Xiao YR 2023 SN 2158-9682 K1 Energy consumption K1 Three-dimensional displays K1 Stacking K1 Field effect transistors K1 Capacitors K1 Monolithic integrated circuits K1 Very large scale integration SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185243 DO https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185243 SF ELIB - SuUB Bremen
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