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Lg = 60 nm In0.53 Ga0.47 As MBCFETs: From gm_max = 13.7 mS/..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),

Yoo, J.-H. ; Jo, H.-B. ; Lee, I.-G.... - p. 1-2 , 2023

Link: https://doi.org/10.23919/VLSITechnologyandCir57934.202..

RT 
T1 <cTitle>2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)</cTitle>: T1 <Title>Lg = 60 nm In0.53 Ga0.47 As MBCFETs: From gm_max = 13.7 mS/üm and Q = 180 to virtual-source modeling</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-10185250&Exemplar=1&LAN=DE
				
A1 Yoo, J.-H.
A1 Jo, H.-B.
A1 Lee, I.-G.
A1 Choi, S.-M.
A1 Baek, J.-M.
A1 Lee, S T.
A1 Jang, H.
A1 Kong, M W.
A1 Kim, H H.
A1 Lee, H J.
A1 Kim, H.-J.
A1 Jeong, H.-S.
A1 Park, W.-S.
A1 Ko, D H.
A1 Shin, S. H.
A1 Kwon, H.-M.
A1 Kim, S K.
A1 Kim, J G.
A1 Yun, J.
A1 Kim, T.
A1 Shin, K.-Y.
A1 Kim, T.-W.
A1 Shin, J.-K.
A1 Lee, J.-H.
A1 Shin, C.-S.
A1 Seo, K.-S.
A1 Kim, D.-H.
YR 2023
SN 2158-9682
K1 Heart
K1 Dry etching
K1 Gallium arsenide
K1 Fluorine
K1 Field effect transistors
K1 Very large scale integration
K1 Logic gates
SP 1
OP 2
LK http://dx.doi.org/https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185250
DO https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185250
SF ELIB - SuUB Bremen

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