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1 Ergebnisse
1
A 4.24GHz 128X256 SRAM Operating Double Pump Read Write Sam..:
, In:
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
,
Zhang, Nick
;
Kim, Young Suk
;
Hsu, Peter
... - p. 1-2 , 2023
Link:
https://doi.org/10.23919/VLSITechnologyandCir57934.202..
RT T1
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
: T1
A 4.24GHz 128X256 SRAM Operating Double Pump Read Write Same Cycle in 5nm Technology
UL https://suche.suub.uni-bremen.de/peid=ieee-10185268&Exemplar=1&LAN=DE A1 Zhang, Nick A1 Kim, Young Suk A1 Hsu, Peter A1 Kim, Samsoo A1 Tao, Derek A1 Liao, Hung-Jen A1 Wang, P.W. A1 Yeap, Geoffrey A1 Li, Quincy A1 Chang, Tsung-Yung Jonathan YR 2023 SN 2158-9682 K1 Semiconductor device measurement K1 High performance computing K1 Random access memory K1 Metals K1 Very large scale integration K1 FinFETs K1 Silicon K1 1R1W K1 SRAM K1 double pump K1 5nm SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185268 DO https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185268 SF ELIB - SuUB Bremen
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