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1 Ergebnisse
1
A 3nm 256Mb SRAM in FinFET Technology with New Array Bankin..:
, In:
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
,
Chang, Jonathan
;
Chen, Yen-Huei
;
Chan, Gary
... - p. 1-2 , 2023
Link:
https://doi.org/10.23919/VLSITechnologyandCir57934.202..
RT T1 <cTitle>2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)</cTitle>: T1 <Title>A 3nm 256Mb SRAM in FinFET Technology with New Array Banking Architecture and Write-Assist Circuitry Scheme for High-Density and Low-VMIN Applications</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10185287&Exemplar=1&LAN=DE A1 Chang, Jonathan A1 Chen, Yen-Huei A1 Chan, Gary A1 Lin, Kuo-Cheng A1 Wang, Po-Sheng A1 Lin, Yangsyu A1 Chen, Sevic A1 Lin, Peijiun A1 Wu, Ching-Wei A1 Lin, Chih-Yu A1 Nien, Yi-Hsin A1 Fujiwara, Hidehiro A1 Katoch, Atul A1 Lee, Robin A1 Liao, Hung-Jen A1 Liaw, Jhon-Jhy A1 Wu, Shien-Yang Michael A1 Li, Quincy YR 2023 SN 2158-9682 K1 Random access memory K1 Banking K1 Very large scale integration K1 FinFETs SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185287 DO https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185287 SF ELIB - SuUB Bremen
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